Influences of donor dopants on the properties of PZT-PMS-PZN piezoelectric ceramics sintered at low temperatures

Title
Influences of donor dopants on the properties of PZT-PMS-PZN piezoelectric ceramics sintered at low temperatures
Authors
윤석진최지원최주영단단 완Qian LiYing Yang
Keywords
Low temperature sintering; Donor dopants; piezoelectric properties; PZT-PMS-PZN
Issue Date
2010-10
Publisher
Journal of the Korean Physical Society
Citation
VOL 57, NO 4, 863-867
Abstract
0.90Pb(Zr0.48Ti0.52)O3-0.05Pb(Mn1/3Sb2/3)O3-0.05Pb(Zn1/3Nb2/3)O3 quaternary piezoelectric ceramics with CuO added were synthesized by using a conventional method at low sintering temperatures. CuO additive, 1.0 wt%, significantly improves the sinterability of 0.90PZT-0.05PMS- 0.05PZN ceramics, lowering the sintering temperature to 900 ℃ and showing moderate electrical properties: d33 = 306 pC/N, Qm = 997, kp = 53.6%, tanδ = 0.50%, and εT33 = 1351. To obtain more optimal piezoelectric properties, we selected Bi2O3 and Nb2O5 as donor dopants to introduce a softening effect. The crystal structure, micro-morphology and electrical properties were studied in terms of the Bi2O3 and the Nb2O5 contents. Our study demonstrates that Bi2O3 is very effective in improving the piezoelectric properties, causing a significant enhancement in d33 and kp values. Particularly, 0.75-wt%-Bi2O3-added 0.90PZT-0.05PMS-0.05PZN + 1.0 wt% CuO ceramics show excellent electrical properties: d33 = 363 pC/N, Qm = 851, kp = 59.3%, tanδ = 0.38%, and εT33 =1596. On the other hand, the effect of Nb2O5 on the piezoelectric properties is very complicated, 0.50 wt% Nb2O5 doped 0.90PZT-0.05PMS-0.05PZN + 1.0 wt% CuO ceramics have a remarkable improvement in kp value and maintain good electrical properties: d33 = 300 pC/N, Qm = 971, kp = 58.4%, tanδ = 0.36%, and εT33 = 1332.
URI
http://pubs.kist.re.kr/handle/201004/45597
ISSN
0374-4884
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