Design of Noncoplanar Diagonal Electrode Structure for Oxide Thin-film Transistor

Title
Design of Noncoplanar Diagonal Electrode Structure for Oxide Thin-film Transistor
Authors
정유진전용우전윤수김대환이상렬
Keywords
thin-film transistors (TFTs); Electronic mechanisms; semiconductors
Issue Date
2011-01
Publisher
IEEE Electron Device Letters
Citation
VOL 32, NO 1, 39-41
Abstract
The top-source noncoplanar diagonal electrode (TS-NDE) structure was fabricated and simulated with the oxide channel layer. The structure exhibits enhanced stability and low subthreshold swing with higher mobility than those of bottom– source electrode structure thin-film transistors (TFTs). Interest ingly, in this highly stable TS-NDE, the current density was highly formed through the center of the active-channel region from top– source electrode to bottom-drain electrode in the thin-film layer due to the on-current state. In other words, the TS-NDE TFT is less affected by back-interface interferences, which are the main degradation factors in oxide TFTs due to the different current path.
URI
http://pubs.kist.re.kr/handle/201004/45598
ISSN
0741-3106
Appears in Collections:
KIST Publication > Article
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