The effect of the concentration and oxidation state of Sn on the structural and electrical properties of indium tin oxide nanowires

Title
The effect of the concentration and oxidation state of Sn on the structural and electrical properties of indium tin oxide nanowires
Authors
박경수최영진강진구Yun-Mo Sung박재관
Keywords
ITO; nanowires; resistivity; solubility; XPS
Issue Date
2011-08
Publisher
Nanotechnology
Citation
VOL 22, NO 28, 285712-1-285712-5
Abstract
High quality single-crystalline indium tin oxide (ITO) nanowires with controlled Sn contents of up to 32.5 at.% were successfully synthesized via a thermal metal co-evaporation method, based on a vapor–liquid–solid growth mode, at a substrate temperature of as low as 540 ◦C. The high solubility of Sn in the nanowires was explained with the existence of Sn2+ ions along with Sn4+ ions: the coexistence of Sn2+ and Sn4+ ions facilitated their high substitutional incorporation into the In2O3 lattice by relaxing structural and electrical disturbances due to the differences in ionic radii and electrical charges between Sn and In3+ ions. It was revealed that, while the lattice parameter of the ITO nanowires had a minimum value at a Sn content of 6.3 at.%, the electrical resistivity had a minimum value of about 10−3 Ω cm at a Sn content of 14 at.%. These structural and electrical behaviors were explained by variation in the relative and total amounts of the two species, Sn2+ and Sn4+.
URI
http://pubs.kist.re.kr/handle/201004/45618
ISSN
0957-4484
Appears in Collections:
KIST Publication > Article
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