The effect of the concentration and oxidation state of Sn on the structural and electrical properties of indium tin oxide nanowires
- The effect of the concentration and oxidation state of Sn on the structural and electrical properties of indium tin oxide nanowires
- 박경수; 최영진; 강진구; Yun-Mo Sung; 박재관
- ITO; nanowires; resistivity; solubility; XPS
- Issue Date
- VOL 22, NO 28, 285712-1-285712-5
- High quality single-crystalline indium tin oxide (ITO) nanowires with controlled Sn contents of
up to 32.5 at.% were successfully synthesized via a thermal metal co-evaporation method, based
on a vapor–liquid–solid growth mode, at a substrate temperature of as low as 540 ◦C. The high
solubility of Sn in the nanowires was explained with the existence of Sn2+ ions along with Sn4+
ions: the coexistence of Sn2+ and Sn4+ ions facilitated their high substitutional incorporation
into the In2O3 lattice by relaxing structural and electrical disturbances due to the differences in
ionic radii and electrical charges between Sn and In3+ ions. It was revealed that, while the
lattice parameter of the ITO nanowires had a minimum value at a Sn content of 6.3 at.%, the
electrical resistivity had a minimum value of about 10−3 Ω cm at a Sn content of 14 at.%. These
structural and electrical behaviors were explained by variation in the relative and total amounts
of the two species, Sn2+ and Sn4+.
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