Effect of Interfacial Suboxides and Dangling Bonds on Tunneling Current through Nanometer-thick SiO2 Layers
- Effect of Interfacial Suboxides and Dangling Bonds on Tunneling Current through Nanometer-thick SiO2 Layers
- 고은정; 이광렬; 최형준
- Issue Date
- Physical review B, Condensed matter and materials physics
- VOL 84, NO 3, 033303-1-033303-4
- Quantum-mechanical tunneling of charge carriers through nanometer-thick SiO2 layers is one of the key issues
in Si-based electronics. Here, we report first-principles transport calculations of charge-carrier tunneling through
nanometer-thick SiO2 layers in Si/SiO2/Si structures.We find that tunneling of holes in the valence bands occurs
mainly via oxygen 2p orbitals perpendicular to Si–O–Si bonds, and it can be enhanced greatly by interfacial
suboxides and dangling bonds in Si/SiO2 interfaces. Electrons in the conduction bands show tunneling behaviors
sensitive to their wave vectors parallel to the interfaces, reflecting the six conduction-band minima in the bulk
Si. Our results provide atomistic description of tunneling currents through SiO2 layers, and suggest that leakage
current will be blocked more effectively if suboxides and dangling bonds are reduced.
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