Resistance switching of heteroepitaxial Cr-doped SrZrO3 thin films

Title
Resistance switching of heteroepitaxial Cr-doped SrZrO3 thin films
Authors
양민규박재완이전국
Keywords
electronic materials; defects; epitaxy; resistive switching; SrZrO3; Cr doping; deposition; atomic force microscopy (AFM)
Issue Date
2011-08
Publisher
Metals and Materials International
Citation
VOL 17, NO 4, 637-640
Abstract
Heteroepitaxial Cr-doped SrZrO3 thin films were grown on 200 nm-thick SrRuO3 films deposited on SrTiO3 (100) substrates by pulsed laser deposition. The Cr-doped SrZrO3 films on the SrRuO3 bottom electrode exhibited an XRD peak for the (hh0/00l) planes of SrZrO3 and SrRuO3 thin films, showing a good epitaxial relationship. The I-V characteristics of the Au/Cr-doped SrZrO3/SrRuO3 MIM structures revealed resistance switching behavior with an ON/OFF resistance ratio of 20.
URI
http://pubs.kist.re.kr/handle/201004/45630
ISSN
1598-9623
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KIST Publication > Article
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