Half wave rectification of inorganic/organic heterojunction diode at the frequency of 1 kHz

Title
Half wave rectification of inorganic/organic heterojunction diode at the frequency of 1 kHz
Authors
이덕희박동훈김상식이상렬
Keywords
Ga-doped sinc oxide; poly(3,4-ethylenedioxythiophene); poly(styrenesulfonate); heterojunction; diodes; p-n juntions; half wave rectification; sputtering
Issue Date
2011-06
Publisher
Thin solid films
Citation
VOL 519, NO 16, 5658-5661
Abstract
An inorganic/organic vertical heterojunction diode has been demonstrated with p-type Poly(3,4- ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS) deposited by spin coating on n-type Gadoped ZnO (GZO) thin films. Transparent conducting GZO thin films are deposited on glass substrate by rfmagnetron sputtering. Electrical properties of GZO thin films are investigated depending on the processing temperatures. The resistivity, mobility and carrier concentration of the GZO thin films deposited at processing temperatures of 500 °C are measured to be about 3.6×10−4 Ω cm, 23.8 cm2/Vs and 7.1×1020 cm3, respectively. The root mean square surface roughness of the GZO thin films is calculated to be ~0.9 nm using atomic force microscopy. Current-voltage characteristics of the n-GZO/p-PEDOT:PSS heterojunction diode present rectifying operation. Half wave rectification is observed with the maximum output voltage of 1.85 V at 1 kHz. Low turn-on voltage of about 1.3 V is obtained and the ideality factor of the n-GZO/p-PEDOT: PSS diode is derived to be about 1.8.
URI
http://pubs.kist.re.kr/handle/201004/45658
ISSN
0040-6090
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