Microstructure Evolution and Defect Formation in Cu Through-Silicon Vias (TSVs) During Thermal Annealing

Title
Microstructure Evolution and Defect Formation in Cu Through-Silicon Vias (TSVs) During Thermal Annealing
Authors
신해아슬김병준김주헌황성환ARIEF SURIADI BUDIMAN손호영변광유NOBUMICHI TAMURAMARTIN KUNZ김동익주영창
Keywords
Through-silicon via (TSV); copper; microstructure; twin; stress
Issue Date
2012-04
Publisher
Journal of electronic materials
Citation
VOL 41, NO 4, 712-719
Abstract
The microstructural evolution of Cu through-silicon vias (TSVs) during thermal annealing was investigated by analyzing the Cu microstructure and the effects of twin boundaries and stress in the TSV. The Cu TSV had two regions with different grain sizes between the center and the edge with a random Cu texture before and after annealing. The grain size of large grains was almost unchanged after annealing, and the abrupt grain growth was restricted by the twin boundaries due to their structural stability. However, microvoids and cracks in the Cu TSV were observed after annealing. These defects were formed by the stress concentration among Cu grains. After defects were formed, the stress level of the TSV was decreased after annealing.
URI
http://pubs.kist.re.kr/handle/201004/45661
ISSN
03615235
Appears in Collections:
KIST Publication > Article
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