Formation of III-V Droplet Epitaxial Nanostructures for Nano-photonics

Title
Formation of III-V Droplet Epitaxial Nanostructures for Nano-photonics
Authors
이은혜송진동윤재진김지훈김수연배민환연규혁김준영한일기최원준장수경김영동김종수
Keywords
Droplet epitaxy; GaAs; Nanostructure
Issue Date
2013-08
Publisher
BIEN 2013
Abstract
Droplet epitaxy (DE) is based on perfect separation between group 3 and group 5 in the formation of III-V nanostructures [1]. The main advantage of DE is to be able to grow semiconductor nanostructures without limitation of combination of materials. The DE method makes it possible to grow various kinds of nanostructures, such as ultra low density droplet quantum dots (QDs), nanostructures with various shapes, and huge droplet nanostrucutures. In this study, formation of low density GaAs quantum structures for single photon sources (SPSs) and large-sized GaAs droplet nanostrucutures for antireflectors (ARs) will be shown. For the formation of low density GaAs quantum structures, this study will present a few results as follows; i) control of formation of low density GaAs QDs (~ 3 QDs/μm2), ii) growth of low density GaAs QDs by internal thermal heating, iii) formation of uniform GaAs droplet QDs on 2-inch substrates, iv) formation of quantum rings. The results will show the formation of mass-producible GaAs quantum structures with better optical properties for a SPS application. As an intriguing candidate for antireflection, the formation of large GaAs droplet islands will be also shown. Recently, the subwavelength structures such as nipples founded on the moth eyes have been known as a good antireflector [2]. However, the fabrication of the structures for antireflection is typically including etching processes. The self-assembled large GaAs islands have merit of avoiding defects formed by the etching process. In this study, reduction of reflectance of s-, p- polarization for large GaAs droplet QDs will be shown by spectroscopic ellipsometry in the visible range. In addition, it will be shown that the shape of GaAs islands can be tuned by a control of As4 for better antireflection. These results would indicate that self-assembled GaAs islands can be a promising omnidirectional antireflector for high-effeciency optoe
URI
http://pubs.kist.re.kr/handle/201004/45763
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