Effect of Microstructure of Quantum Dot Layer on Electroluminescent Properties of Quantum Dot Light Emitting Devices
- Effect of Microstructure of Quantum Dot Layer on Electroluminescent Properties of Quantum Dot Light Emitting Devices
- 윤성룡; 전민현; 이전국
- quantum dot LEDs; inorganic semiconductor; spin-coating; electroluminescence; planar lighting
- Issue Date
- VOL 23, NO 8, 430-434
- Quantum dots(QDs) with their tunable luminescence properties are uniquely suited for use as lumophores in light
emitting device. We investigate the microstructural effect on the electroluminescence(EL). Here we report the use of inorganic
semiconductors as robust charge transport layers, and demonstrate devices with light emission. We chose mechanically smooth
and compositionally amorphous films to prevent electrical shorts. We grew semiconducting oxide films with low free-carrier
concentrations to minimize quenching of the QD EL. The hole transport layer(HTL) and electron transport layer(ETL) were
chosen to have carrier concentrations and energy-band offsets similar to the QDs so that electron and hole injection into the
QD layer was balanced. For the ETL and the HTL, we selected a 40-nm-thick ZnSnOx with a resistivity of 10 Ω·cm, which
show bright and uniform emission at a 10 V applied bias. Light emitting uniformity was improved by reducing the rpm of QD
spin coating.At a QD concentration of 15.0 mg/mL, we observed bright and uniform electroluminescence at a 12 V applied bias.
The significant decrease in QD luminescence can be attributed to the non-uniform QD layers. This suggests that we should
control the interface between QD layers and charge transport layers to improve the electroluminescence.
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