Comparison of thermal stabilities between Ge-Sb-Te and In-Sb-Te phase change materials
- Comparison of thermal stabilities between Ge-Sb-Te and In-Sb-Te phase change materials
- 김용태; 김성일
- Issue Date
- Applied physics letters
- VOL 103, NO 12, 121906-1-121906-4
- Crystallization temperatures, activation energies, and thermal diffusivities of In3Sb1Te2 (IST) and
Ge2Sb2Te5 (GST) are investigated with a differential scanning calorimetry, a xenon laser flash, and a
transmission electron microscopy. The activation energies for crystallizing the IST and the GST are
5.2 eV and 3.31 eV, respectively. The thermal diffusivity of the IST is about a half of the GST. The
thermal diffusion length in the IST-phase change random access memory cell is relatively shorter
than the GST due to lower thermal diffusivity. Experimental results reveal that the IST is more
thermally stable than the GST.
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