Catalyst-free growth of readily detachable nanographene on alumina
- Catalyst-free growth of readily detachable nanographene on alumina
- 박재현; 김경훈; 김준성; 이철진; 심준형; 송용원; 하정숙
- nanographene; alumina substrate; transfer process; flexible electrode; catalyst-free
- Issue Date
- Journal of materials chemistry. C, Materials for optical and electronic devices
- VOL 1, NO 39, 6438-6445
- We have grown graphene directly on alumina (Al2O3) substrates without catalysts using conventional thermal chemical vapor deposition. By choosing Al2O3 as a growth substrate, the polycrystallinity of graphene was enhanced to form nanometer-size dome-like grains, which ensured a statistically homogeneous electrical property of graphene over a large area. As-grown bilayer, the nanographene (nGr) film showed a sheet resistance of ~3 kΩ −1 with a standard deviation of ~2.3% over 15 mm × 15 mm. Top- and bottom-gate nGr thin film transistors (TFTs) fabricated directly on the Al2O3 substrate exhibited field-effect mobilities of 89 and 41 ㎠ V−1 s−1, respectively. Moreover, the grown nGr could be easily detached from the Al2O3 substrate due to weak adhesion between the nGr and Al2O3, which has abundant fixed charges. Dry-transfer of the grown nGr from the Al2O3 substrate was realized via spin-coating a polyimide (PI) or poly(4-vinylphenol) film and subsequently detaching the film together with the nGr film. The recycled substrates provided the nGr films with reproducibility. The nGr devices on a 3 μm-thick PI film were stable upon bending with a bending diameter of down to 6 mm.
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