Characterization of the p-type Sn1-xMnxO2 Oxide Semiconductor Nanoparticles by Sol-Gel Method
- Characterization of the p-type Sn1-xMnxO2 Oxide Semiconductor Nanoparticles by Sol-Gel Method
- 이칠형; 최두진; 오영제
- Oxide semiconductor; Nanoparticle; SnMnO2; p-type; Mobility; Sn1-xMnxO2
- Issue Date
- Electronic materials letters
- VOL 9, NO 3, 283-286
- This paper reports the properties of p-type oxide semiconductor Sn1-xMnxO2 (MTO) nanoparticles with a low
doping concentration of Mn (0 ≤ x ≤ 0.05) prepared with a sol-gel method. X-ray diffraction (XRD) results
show that single-phase rutile MTO was obtained for x up to 0.03. The samples have particle average size
of about 100 nm, which was confirmed with scanning electron microscopy (SEM) and high-resolution transmission
electron microscopy (HRTEM). The compositional changes and electrical properties of the MTO
nanoparticles were characterized by using x-ray photoelectron spectroscopy (XPS) and Hall effect measurements.
Mn3+ cations are incorporated into the rutile SnO2 lattice. P-type conduction which is arisen from
the substitution of Mn3+ to Sn4+ lattice was demonstrate by Hall data. These compositions have hole carrier
concentrations in the range 2.26~8.53 × 1016 cm−3 and exhibit Hall mobilities in the range 0.8~4.1 cm2/Vs.
The mobility of MTO decreases as the Mn content increases due to the doping effect. A transparent, ptype
TFT device can be fabricated with this composition.
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