Synthesis of p-GaN nanowires
- Synthesis of p-GaN nanowires
- 김성욱; 박윤호; 김일수; 박태원; 권병욱; 최원국; 최헌진
- p-GaN; Cu doping; LED; nanowire
- Issue Date
- VOL 5, NO 18, 8550-8554
- GaN has been utilized in optoelectronics for two decades. However, p-type doping still remains crucial for
realization of high performance GaN optoelectronics. Though Mg has been used as a p-dopant, its
efficiency is low due to the formation of Mg-H complexes and/or structural defects in the course of
doping. As a potential alternative p-type dopant, Cu has been recognized as an acceptor impurity for
GaN. Herein, we report the fabrication of Cu-doped GaN nanowires (Cu:GaN NWs) and their p-type
characteristics. The NWs were grown vertically via a vapor.liquid.solid (VLS) mechanism using a Au/Ni
catalyst. Electrical characterization using a nanowire-field effect transistor (NW-FET) showed that the
NWs exhibited n-type characteristics. However, with further annealing, the NWs showed p-type
characteristics. A homo-junction structure (consisting of annealed Cu:GaN NW/n-type GaN thin film)
exhibited p-n junction characteristics. A hybrid organic light emitting diode (OLED) employing the
annealed Cu:GaN NWs as a hole injection layer (HIL) also demonstrated current injected luminescence.
These results suggest that Cu can be used as a p-type dopant for GaN NWs.
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