Surface electronic structure of nitrogen-doped semiconducting single-walled carbon nanotube networks
- Surface electronic structure of nitrogen-doped semiconducting single-walled carbon nanotube networks
- 박영란; 고민재; 송윤호; 이철진
- single-wall carbon nanotube; nitrogen-doping; electronic structure
- Issue Date
- Journal of applied physics
- VOL 114, NO 15, 153516-1-153516-10
- We investigated the effects of vacuum annealing on the surface electronic structure and the work function of single-walled carbon nanotubes (SWCNTs). We changed the doping type of
semiconducting single-walled carbon nanotubes (semi-SWCNTs) from p-type to n-type, and
investigated their optical properties. The HNO3 treated p-type SWCNT network was converted to n-type after vacuum annealing due to formation of C-N bond. The C 1s sp2 binding energy of the vacuum annealed semi-SWCNTs was shifted toward a higher binding energy about 0.42 eV, which indicates a raising Fermi level as much as 0.42 eV compared with the intrinsic semi-SWCNTs. In addition, the work function of the vacuum annealed semi-SWCNT was observed towards lower energies. It is considered that the C-N bonding of semi-SWCNTs creates a donor level near the bottom of the conduction band, thus raising the Fermi level. The ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy revealed that the increased binding energy of C 1s sp2 and the decreased work function of semi-SWCNTs are caused by n-type doping after vacuum annealing.
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