First-principle study of amorphous SiZnSnO thin-film transistor with excellent stability
- First-principle study of amorphous SiZnSnO thin-film transistor with excellent stability
- 정유진; 강일준; 박철홍; 이상렬
- Oxide semiconductor; Thin film transistor; Mobility; In-free; Stability
- Issue Date
- Thin solid films
- VOL 534, 609-613
- We find that an incorporation of the small amount of Si in the ZnSnO stabilizes the device performance
significantly. Through the first-principle calculation, we find that the formation of O-deficient states is easily
suppressed by Si-doping due to the volume shrinkage effect, which leads to the stable device operation. This
behavior is consistent with the X-ray photoelectron spectroscopy measured data.
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