First-principle study of amorphous SiZnSnO thin-film transistor with excellent stability

Title
First-principle study of amorphous SiZnSnO thin-film transistor with excellent stability
Authors
정유진강일준박철홍이상렬
Keywords
Oxide semiconductor; Thin film transistor; Mobility; In-free; Stability
Issue Date
2013-05
Publisher
Thin solid films
Citation
VOL 534, 609-613
Abstract
We find that an incorporation of the small amount of Si in the ZnSnO stabilizes the device performance significantly. Through the first-principle calculation, we find that the formation of O-deficient states is easily suppressed by Si-doping due to the volume shrinkage effect, which leads to the stable device operation. This behavior is consistent with the X-ray photoelectron spectroscopy measured data.
URI
http://pubs.kist.re.kr/handle/201004/46074
ISSN
00406090
Appears in Collections:
KIST Publication > Article
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