Tb0.3Dy0.7Fe1.9/PbZr0.52Ti0.48O3 Micro-Bridge on SiNx Thin Film for Low Frequency Magnetic Sensing Applications

Title
Tb0.3Dy0.7Fe1.9/PbZr0.52Ti0.48O3 Micro-Bridge on SiNx Thin Film for Low Frequency Magnetic Sensing Applications
Authors
이동건한준현이준우최욱유용경김진석황교선김태송천동원김유찬이규형이정훈
Issue Date
2013-10
Publisher
Japanese journal of applied physics
Citation
VOL 52, NO 10, 10MC10-1-10MC10-4
Abstract
A micro-fabricated bridge sensor for determining minute magnetic field variation is proposed. A micro-bridge with 100×400 µm2 dimensions (width × length) comprises a multi-layered structure of Tb0.3Dy0.7Fe1.9/SiO2/Pt/PbZr0.52Ti0.48O3/Pt/Ta on a SiNx supporting layer. We observed the limit of detection under small DC magnetic field as 1×10-11 T which was converted electrically to 77 µV with a 5 µV noise floor via elastic coupling between magnetostrictive and piezoelectric thin film. The magnetoelectric (ME) voltage was linearly proportional to small magnetic field variance, and the experimental ME coefficient was measured as 9.9 V/(cm·Oe).
URI
http://pubs.kist.re.kr/handle/201004/46075
ISSN
00214922
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE