Investigation of tungsten nitride deposition using tungsten hexafluoride precursor for via and plug metallization

Title
Investigation of tungsten nitride deposition using tungsten hexafluoride precursor for via and plug metallization
Authors
황영현조원조김용태
Keywords
tungsten nitride; atomic layer depostion; Cu; diffusion barrier; metallization
Issue Date
2013-10
Publisher
Japanese journal of applied physics
Citation
VOL 52, NO 10, 10MC07-1-10MC07-4
Abstract
We investigated a tungsten nitride (WN)-based diffusion barrier layer (DBL) on a Cu metal layer by atomic layer deposition (ALD) using three different treatments, namely, ammonia (NH3) plasma treatment, ammonia (NH3) pulsed plasma treatment, and diborane (B2H6) pulsed gas injection treatment. In an experimental result of a method with B2H6 pulsed gas injection, the fluorine (F) concentration was below 3% in the WN films, and optimum growth conditions, including a linear deposition rate, a few incubation cycles, good thermal stability, and an excellent step coverage of approximately 100%, were observed for the DBL application. These results suggest that the B2H6 pulsed gas injection is a useful method for obtaining high-quality WN films for use as a DBL on a Cu contact via a 15 nm node.
URI
http://pubs.kist.re.kr/handle/201004/46085
ISSN
00214922
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