Strain-relaxed SiGe layer on Si formed by PIII&D technology

Title
Strain-relaxed SiGe layer on Si formed by PIII&D technology
Authors
한승희문선우김성민김경훈
Keywords
plasma immersion ion implantation; plasma; ion implantation; strain-relaxed SiGe; SiGe; Non-gaseous plasma immersion ion implantation; HiPIMS
Issue Date
2013-07
Publisher
The 12th International Workshop on PBIID
Abstract
The Ge-implanted Si samples were analyzed using Auger electron spectroscopy, High-resolution X-ray diffractometer, and Transmission electron microscopy to in-vestigate the depth distribution, the degree of strain relaxation, and the crystalline structure, respectively. The analysis results showed that a strain-relaxed SiGe layer of ~80 nm thickness could be effectively formed on Si substrate by Ge ion implanta-tion using the newly-developed PIII&D process for non-gaseous elements.
URI
http://pubs.kist.re.kr/handle/201004/46103
Appears in Collections:
KIST Publication > Conference Paper
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