Growth Characteristics and Electrical Properties of Diameter-selective InAs Nanowires
- Growth Characteristics and Electrical Properties of Diameter-selective InAs Nanowires
- Jae Cheol Shin; Ari Lee; Hyo Jin Kim; 김재헌; Kyoung Jin Choi; Young Hun Kim; Nam Kim; Myung-Ho Bae; Ju-Jin Kim; Bum-Kyu Kim
- MOCVD; InAs nanowire; Field-effect transistor; Mobility
- Issue Date
- Journal of the Korean Physical Society
- VOL 62, NO 11, 1678-1682
- Smaller-diameter semiconductor nanowires (NWs) are appropriate for electronic applications due to the lower leakage current and better field effect. However, the mobility of a NW gets smaller with decreasing diameter because surface scattering events of mobile carriers are increased. Therefore, the choice of a proper diameter is a key role for future high-performance transistors based on semiconductor NWs. Here, we control the diameters of catalyst-free InAs NWs grown at various growth temperatures by using metal-organic chemical vapor deposition to be in the range of 30 to 160 nm. The mobility of the fabricated InAs field-effect transistor increases with diameter and decreases with increasing temperature, which indicates that the surface scattering determines the electrical property of NWs.
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