Observation of the Fractional Quantum Hall States in Bilayer Graphene

Observation of the Fractional Quantum Hall States in Bilayer Graphene
김영욱이동수정수용Viera Skakalova조아라Kenji WatanabeTakashi Taniguchi김준성Jurgen H. Smet
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한국물리학회 학술논문발표회
Progress in high-quality sample preparation has allowed access to the multicomponent fractional quantum Hall states in monolayer graphene [1]. However, in bilayer graphene, only faint evidences of fractional quantum Hall effect have been reported [2] since the quality control is more difficult than monolayer graphene. In order to circumvent such difficulties, we have suggested the measurement of transconductance fluctuations [3, 4]. Mesoscopic transport measurements normally probe averaged properties of the sample. However, the transconductance fluctuations, even though they are mesoscopic transport properties, can visualize the behavior of charge carriers that occurs in nanometer scale and make it possible to observe the fragile quantum hall states. ` Here, we report the observation of fractional quantum Hall states in high-quality bilayer graphene on h-BN using the transconductance fluctuation measurements. The gate dependent resistance at zero magnetic field shows that carrier inhomogeneity is ~11010 cm-2 both for electrons and for holes. Transconductance fluctuation map shows rich line sets parallel to filling factors including ν = 1/3, 2/3, 4/3, 10/3, 11/3, 1/5 and 2/5. Such multiple fractional quantum Hall states have not yet been reported for bilayer graphene. Moreover, we confirm the presence of the even denominator states ν = 1/2 which was recently reported in Ref [4].
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