Double-layered vertically integrated amorphous-In2Ga2ZnO7 thin-film transistor

Title
Double-layered vertically integrated amorphous-In2Ga2ZnO7 thin-film transistor
Authors
라상호김언기정지심황은석최정혜황철성
Issue Date
2013-10
Publisher
Applied physics letters
Citation
VOL 103, NO 18, 183503-1-183503-5
Abstract
Two serially connected and vertically integrated amorphous-In2Ga2ZnO7 thin film transistors (V-TFTs) with ~600 and 400-nm channel lengths were fabricated. Top and bottom V-TFTs showed well-behaved transfer characteristics with an Ion/Ioff ratio of ~108 and a sub-threshold swing of ~0.6 V/dec., which are much improved results compared with the previous report on single-layer V-TFTs. Electrical performances of two V-TFTs were cross-checked, and they showed certain influences from the other device depending on operation conditions, which was attributed to charge trapping in the gate dielectric layer during gate voltage sweeping. V-TFT with thermally grown SiO2 showed negligible charge trapping behavior.
URI
http://pubs.kist.re.kr/handle/201004/46160
ISSN
00036951
Appears in Collections:
KIST Publication > Article
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