Epitaxial Growth of Organic Insulators on Graphene on SiO2 using 2D Crystal Engineering
- Epitaxial Growth of Organic Insulators on Graphene on SiO2 using 2D Crystal Engineering
- 안석훈; Seok Ju Kang; Chul-ho Lee; Colin Nuckolls
- 2D crystallization; STM; graphene; self-assembly
- Issue Date
- As early as 1961 it was reported, through calorimetric measurements that alkanes would spontaneously assemble into ordered arrays on suitable substrates. Great advances in the study of their structures were later achieved by the application of scanning tunneling microscopy (STM) to these molecular adsorbates physisorbed at the liquid/solid interface. In the case of highly oriented pyrolytic graphite (HOPG) substrate, a number of highly ordered monolayers (two-dimensional crystals) have been intensively studied at room temperature in air upon placement of a solution of the analyte on a freshly cleaved surface. This two-dimensional (2D) crystal engineering has been applied to graphene, which has the identical surface structure with HOPG..[1,2] However, fundamental studies regarding molecular self-assemblies on graphene on insulating surfaces are still lacking. In this study, alkane molecules were self-assembled on graphene on SiO2 in two-dimension (2D) and three-dimension (3D) and the symmetric relationship between self-assemblies and graphene was investigated by using STM and transmission electron microscopy (TEM). Although graphene has the roughness originated from SiO2 surface, alkane molecules were self-assembled in 2D on graphene/SiO2 while keeping their periodicity even in large area due primarily to flexibility of alkanes. In addition, the epitaxial growth of the self-assembled monolayer of alkanes was confirmed by comparing the main symmetry of graphene under the monolayer using STM. This 2D monolayer was used as template for self-assemblies of alkanes in 3D, resulting in epitaxial growth of the insulating film. This thin insulating film holds potential for applications such as graphene based electronics.
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