Microstructural failure in Ge2Sb2Te5 phase change memory cell
- Microstructural failure in Ge2Sb2Te5 phase change memory cell
- 김용태; 김영환
- chalcogenides; device failure; HR-TEM; Phase change materials; random access memory
- Issue Date
- Physica Status Solidi. B, Basic Solid State Physics
- VOL 250, NO 10, 1-4
- The microstructural behavior of a Ge2Sb2Te5 (GST) film in a
phase change memory cell has been investigated by highresolution
transmission electron microscopy (HR-TEM). The
HR-TEM results indicate that both hexagonal structured
GeSbTe (GST) and metastable GeTe phases appeared in the
amorphous GST film after about 103 cycles of set/reset
operations. These hexagonal GST grains, although the grain
size is very small, are relatively not easily changed into the
amorphous phase compared with the fcc GST, which results in
an imperfect phase transformation during the quenching
process of the reset cycle. Voids are formed at the interface
close to the top electrode and the formation of the voids widens
the GST film during the multiple cycles of set/reset operations.
These experimental results may explain the failure mechanism
of the GST memory cell.
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