Ion Activation in Boron-doped Polycrystalline Si Thin Films Prepared on Glass Substrates

Title
Ion Activation in Boron-doped Polycrystalline Si Thin Films Prepared on Glass Substrates
Authors
소병수박찬록배승묵김영환황진하
Keywords
Boron implantation; Activation; Raman spectroscopy; Hall measurements
Issue Date
2013-10
Publisher
Journal of the Korean Physical Society
Citation
VOL 63, NO 7, 1362-1367
Abstract
Boron-implanted polycrystalline Si thin films were subjected to thermal annealing. Their evolving electrical and structural features were characterized using Hall measurements, Raman Spectroscopy, transmission electron microcopy, and UV-Visible transmittance spectrophotometry. The Raman analysis indicated that boron implantation did not induce structurally significant damage, i.e., lattice distortion. Even low-temperature annealing at 350 °C provided a high degree of activation, keeping the atomic structure restored on the short-range order, as confirmed by transmission electron microscopy and optical transmittance data. At temperatures above 350 °C, the charge carriers exhibited temperature-independent behaviors, with a charge carrier concentration of 6 or 7 × 1019/cm3. The boron-implanted Si thin films were found to be subject to electronic stopping rather than nuclear stopping, thus allowing for low-temperature activation.
URI
http://pubs.kist.re.kr/handle/201004/46481
ISSN
03744884
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KIST Publication > Article
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