Ion Activation in Boron-doped Polycrystalline Si Thin Films Prepared on Glass Substrates
- Ion Activation in Boron-doped Polycrystalline Si Thin Films Prepared on Glass Substrates
- 소병수; 박찬록; 배승묵; 김영환; 황진하
- Boron implantation; Activation; Raman spectroscopy; Hall measurements
- Issue Date
- Journal of the Korean Physical Society
- VOL 63, NO 7, 1362-1367
- Boron-implanted polycrystalline Si thin films were subjected to thermal annealing. Their evolving electrical and structural features were characterized using Hall measurements, Raman Spectroscopy, transmission electron microcopy, and UV-Visible transmittance spectrophotometry. The Raman analysis indicated that boron implantation did not induce structurally significant damage, i.e., lattice distortion. Even low-temperature annealing at 350 °C provided a high degree of activation, keeping the atomic structure restored on the short-range order, as confirmed by transmission electron microscopy and optical transmittance data. At temperatures above 350 °C, the charge carriers exhibited temperature-independent behaviors, with a charge carrier concentration of 6 or 7 × 1019/cm3. The boron-implanted Si thin films were found to be subject to electronic stopping rather than nuclear stopping, thus allowing for low-temperature activation.
- Appears in Collections:
- KIST Publication > Article
- Files in This Item:
There are no files associated with this item.
- RIS (EndNote)
- XLS (Excel)
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.