Growth of preferred orientation Ge film using inductively coupled plasma-assisted DC magnetron sputtering at low temperature
- Growth of preferred orientation Ge film using inductively coupled plasma-assisted DC magnetron sputtering at low temperature
- 김은겸; 문선우; 박원웅; 한승희
- DC sputtering; ICP-assisted DC sputtering; Ge thin film; Crystalline film growth
- Issue Date
- Thin solid films
- VOL 548, 186-189
- Growth of low-temperature metal-free crystallized Ge film was investigated using inductively coupled plasmaassisted DC magnetron sputtering. The films were deposited both without and with inductively coupled plasma. The films deposited by a conventional DCmagnetron sputtering system had randomly oriented crystalline structures. However, the addition of inductively coupled plasma developed crystal phase froman amorphous to a preferred oriented crystalline with increasing sputtering power. The optical band gaps of the amorphous and crystalline phases were 0.96 eV and 0.7 eV, respectively.
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