Growth of preferred orientation Ge film using inductively coupled plasma-assisted DC magnetron sputtering at low temperature

Title
Growth of preferred orientation Ge film using inductively coupled plasma-assisted DC magnetron sputtering at low temperature
Authors
김은겸문선우박원웅한승희
Keywords
DC sputtering; ICP-assisted DC sputtering; Ge thin film; Crystalline film growth
Issue Date
2013-12
Publisher
Thin solid films
Citation
VOL 548, 186-189
Abstract
Growth of low-temperature metal-free crystallized Ge film was investigated using inductively coupled plasmaassisted DC magnetron sputtering. The films were deposited both without and with inductively coupled plasma. The films deposited by a conventional DCmagnetron sputtering system had randomly oriented crystalline structures. However, the addition of inductively coupled plasma developed crystal phase froman amorphous to a preferred oriented crystalline with increasing sputtering power. The optical band gaps of the amorphous and crystalline phases were 0.96 eV and 0.7 eV, respectively.
URI
http://pubs.kist.re.kr/handle/201004/46493
ISSN
00406090
Appears in Collections:
KIST Publication > Article
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