Low stress C doped WN diffusion barrier for Cu interconnection

Title
Low stress C doped WN diffusion barrier for Cu interconnection
Authors
김용태김영환
Keywords
Cu diffusion barrier; C doped WN; ALD; Cu interconnection
Issue Date
2013-09
Publisher
International Conference on Solid State Devices and Materials 2013
Citation
, 52-53
Abstract
Carbon doped WN thin films have been deposited by atomic layer deposition method and the diffusion barrier performance for Cu interconnect has been investigated. As a result, the C-WN prepared with WF6-CH4-B2H6-NH3 gas system has very low resistivity of 100 μΩ-cm, 95% step coverage in high aspect ratio via hole without plasma assistant process. Thermal stability and electrical measurements of Cu/C-WN interconnect structure show excellent performance.
URI
http://pubs.kist.re.kr/handle/201004/46648
Appears in Collections:
KIST Publication > Conference Paper
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