Effect of Deposition Temperature on Cubic Boron Nitride Thin Film Deposited by Unbalanced Magnetron Sputtering Method with a Nanocrystalline Diamond Buffer Layer

Title
Effect of Deposition Temperature on Cubic Boron Nitride Thin Film Deposited by Unbalanced Magnetron Sputtering Method with a Nanocrystalline Diamond Buffer Layer
Authors
이은숙박종극이욱성성태연백영준
Keywords
cubic boron nitride (c-BN); sputtering; microstructure; residual stress; transmission electron microscopy
Issue Date
2013-11
Publisher
Metals and Materials International
Citation
VOL 19, NO 6, 1323-1326
Abstract
Cubic boron nitride (c-BN) films were deposited by the unbalanced magnetron sputtering method. A Si substrates coated with a nanocrystalline diamond (NCD) was used as a substrate. The deposition temperature was varied systematically from room temperature to 800 °C. A boron nitride target was used which was connected to a radio frequency power supply at 400 W. High frequency power connected to a substrate holder was used for self-biasing. The c-BN phase forms for all samples, irrespective of the deposition temperature, with a little amount of hexagonal phase existing as an intrinsic turbostratic boron nitride (t-BN) layer, whose thickness decreased with increasing temperature. The residual stress was maintained at a nearly constant compressive value. The adhesion improved markedly at high deposition temperature, but the insertion of the NCD buffer layer was ineffective in inhibiting the formation of t-BN layer under the present deposition condition.
URI
http://pubs.kist.re.kr/handle/201004/46663
ISSN
15989623
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE