Effect of Deposition Temperature on Cubic Boron Nitride Thin Film Deposited by Unbalanced Magnetron Sputtering Method with a Nanocrystalline Diamond Buffer Layer
- Effect of Deposition Temperature on Cubic Boron Nitride Thin Film Deposited by Unbalanced Magnetron Sputtering Method with a Nanocrystalline Diamond Buffer Layer
- 이은숙; 박종극; 이욱성; 성태연; 백영준
- cubic boron nitride (c-BN); sputtering; microstructure; residual stress; transmission electron microscopy
- Issue Date
- Metals and Materials International
- VOL 19, NO 6, 1323-1326
- Cubic boron nitride (c-BN) films were deposited by the unbalanced magnetron sputtering method. A Si substrates coated with a nanocrystalline diamond (NCD) was used as a substrate. The deposition temperature was varied systematically from room temperature to 800 °C. A boron nitride target was used which was connected to a radio frequency power supply at 400 W. High frequency power connected to a substrate holder was used for self-biasing. The c-BN phase forms for all samples, irrespective of the deposition temperature, with a little amount of hexagonal phase existing as an intrinsic turbostratic boron nitride (t-BN) layer, whose thickness decreased with increasing temperature. The residual stress was maintained at a nearly constant compressive value. The adhesion improved markedly at high deposition temperature, but the insertion of the NCD buffer layer was ineffective in inhibiting the formation of t-BN layer under the present deposition condition.
- Appears in Collections:
- KIST Publication > Article
- Files in This Item:
There are no files associated with this item.
- RIS (EndNote)
- XLS (Excel)
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.