Flexible and twistable non-volatile memory cell array with all-organic one diode-one resistor architecture
- Flexible and twistable non-volatile memory cell array with all-organic one diode-one resistor architecture
- 지용성; David F. Zeigler; 이동수; 최혜정; Alex K.-Y. Jen; 고흥조; 김태욱
- Issue Date
- Nature Communications
- VOL 4, 2707-1-2707-7
- Flexible organic memory devices are one of the integral components for future flexible
organic electronics. However, high-density all-organic memory cell arrays on malleable
substrates without cross-talk have not been demonstrated because of difficulties in their
fabrication and relatively poor performances to date. Here we demonstrate the first flexible
all-organic 64-bit memory cell array possessing one diode–one resistor architectures. Our allorganic one diode–one resistor cell exhibits excellent rewritable switching characteristics,
even during and after harsh physical stresses. The write-read-erase-read output sequence of
the cells perfectly correspond to the external pulse signal regardless of substrate deformation.
The one diode–one resistor cell array is clearly addressed at the specified cells and
encoded letters based on the standard ASCII character code. Our study on integrated organic
memory cell arrays suggests that the all-organic one diode–one resistor cell architecture is
suitable for high-density flexible organic memory applications in the future.
- Appears in Collections:
- KIST Publication > Article
- Files in This Item:
There are no files associated with this item.
- RIS (EndNote)
- XLS (Excel)
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.