Generation of planar defects caused by the surface diffusion of Au atoms on SiNWs

Title
Generation of planar defects caused by the surface diffusion of Au atoms on SiNWs
Authors
Lee, Woo-JungJin Won MaJung Min BaeMann-Ho Cho안재평
Keywords
Metals; Nanostructures; Surfaces; Defects; Diffusion
Issue Date
2012-10
Publisher
Materials research bulletin
Citation
VOL 47, NO 10, 2739-2743
Abstract
The generation of planar defects in silicon nanowires (SiNWs) synthesized by means of a vapor–liquid–solid (VLS) procedure using Au as a catalyst in an ultra-high vacuum chemical vapor deposition (UHV-CVD) system was investigated. Faceting, the formation of planar defects and the diffusion of Au in SiNWs occurred simultaneously, proportional to the growth temperature and the ratio of the H2 precursor gas. The planes located on the sidewalls of the wire after Au diffusion were faceted (1 1 1) and (1 0 0) surfaces, which represent equilibrium configurations of Si due to surface energy minimization during rapid wire growth under unstable conditions. Moreover, {1 1 1} twin defects were formed on the sidewalls of the faceted boundaries where the Au clusters were mainly located, due to the surface tension of the Au atoms, resulting in clusters at the liquid/solid interfaces in SiNWs with a 〈1 1 1〉 growth direction.
URI
http://pubs.kist.re.kr/handle/201004/46677
ISSN
00255408
Appears in Collections:
KIST Publication > Article
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