Improvement of electroluminescence in QD-LED via QD layer heat-treatment
- Improvement of electroluminescence in QD-LED via QD layer heat-treatment
- 윤성룡; 전민현; 이전국
- 양자점; 리간드; 전계발광; Light Emitting Devices
- Issue Date
- 2013년 한국재료학회 춘계 학술대회
- IGZO layer deposited by RF sputtering in pure Ar and 0.5mTorr of working pressure shows resistivity of 3.4Ωcm
The electroluminescence of QD-LEDs using metal oxide IGZO film was improved after heat-treatment due to the decreased current shunt in the device
We demonstrated the device with 180℃ heat treatment shows peak luminance of 37Cd/㎡ at 10V
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