Synthesis of Hexagonal Boron Nitride (White Graphene) on Metal Substrates from the Polyborazylene (B3N3H4)x Precursor

Title
Synthesis of Hexagonal Boron Nitride (White Graphene) on Metal Substrates from the Polyborazylene (B3N3H4)x Precursor
Authors
박성찬박진형강상욱조현진이창협오인섭펠리시타강정호이병수김명종
Keywords
hexagonal boron nitride; h-BN; white graphene; polyborazylene
Issue Date
2013-07
Publisher
Nano Korea 2013
Abstract
Pure polyborazylene(B3N3H4)x was effectively synthesized by the polymerization reaction of borazine(B3N3H6) and used as a liquid state precursor for hexagonal boron nitride (h-BN, white graphene) synthesis by thermal annealing procedures[1,2]. The large area and high crystalline h-BN films were uniformly synthesized with polyborazylene (B3N3H4)x coated on a electrochemical polished metal foils at 1000℃ for 60 min under argon atmosphere. The h-BN films were characterized by Fourier transform infrared (FT-IR) spectroscopy, X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), Transmission electron microscope (TEM) and Raman spectroscopy. TEM data indicated that the synthesized h-BN had one or few layers with high crystalline structures. Raman spectra, FT-IR spectra and XRD data revealed that h-BN films were formed by phase conversion reactions through the polymer cross-linking. Also, gate dielectric application of the synthesized h-BN was demonstrated for graphene transistors.
URI
http://pubs.kist.re.kr/handle/201004/46785
Appears in Collections:
KIST Publication > Conference Paper
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