Structural and Optical Properties of the InxGa1-xAs Nanowires Grown on SiO2 via Vapor-Liquid-Solid Method

Title
Structural and Optical Properties of the InxGa1-xAs Nanowires Grown on SiO2 via Vapor-Liquid-Solid Method
Authors
신현욱신재철김도양최원준최정우
Keywords
InxGa1-xAs; Nanowires; Vapor-Liquid-Solid; MOCVD
Issue Date
2014-08
Publisher
Journal of nanoscience and nanotechnology
Citation
VOL 14, NO 8, 6297-6300
Abstract
We report the crystal growth of the InxGa1−xAs nanowires (NWs) on SiO2 substrate using metal organic chemical vapor deposition. Au nanoparticles which are disintegrated from thin Au film have been used as a catalyst for the vapor–liquid–solid growth. Electron microscopy characterization is performed to investigate the structural properties of the InxGa1−xAs NW. The InxGa1−xAs NW grown under an optimal condition has a single-crystal wurtzite structure without any misfit dislocation or stacking fault. Strong room temperature photoluminescence peaks are observed from InxGa1−xAs NWs passivated by GaAs. Very low light reflectance is measured at the NW surface in the wavelength range from 250 to 1200 nm. The single crystal InxGa1−xAs NWs are applicable to the various electrical and optical devices.
URI
http://pubs.kist.re.kr/handle/201004/46843
ISSN
15334880
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