Structural and Optical Properties of the InxGa1-xAs Nanowires Grown on SiO2 via Vapor-Liquid-Solid Method
- Structural and Optical Properties of the InxGa1-xAs Nanowires Grown on SiO2 via Vapor-Liquid-Solid Method
- 신현욱; 신재철; 김도양; 최원준; 최정우
- InxGa1-xAs; Nanowires; Vapor-Liquid-Solid; MOCVD
- Issue Date
- Journal of nanoscience and nanotechnology
- VOL 14, NO 8, 6297-6300
- We report the crystal growth of the InxGa1−xAs nanowires (NWs) on SiO2 substrate using metal
organic chemical vapor deposition. Au nanoparticles which are disintegrated from thin Au film have
been used as a catalyst for the vapor–liquid–solid growth. Electron microscopy characterization
is performed to investigate the structural properties of the InxGa1−xAs NW. The InxGa1−xAs NW
grown under an optimal condition has a single-crystal wurtzite structure without any misfit dislocation or stacking fault. Strong room temperature photoluminescence peaks are observed from
InxGa1−xAs NWs passivated by GaAs. Very low light reflectance is measured at the NW surface in the wavelength range from 250 to 1200 nm. The single crystal InxGa1−xAs NWs are applicable to the various electrical and optical devices.
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