Fabrication of GaAs/Al0.3Ga0.7As Multiple Quantum Well Nanostructures on (100) Si Substrate Using a 1-nm InAs Relief Layer

Title
Fabrication of GaAs/Al0.3Ga0.7As Multiple Quantum Well Nanostructures on (100) Si Substrate Using a 1-nm InAs Relief Layer
Authors
오현지박성준임주영N.K Cho송진동W. Lee이유종명재민최원준
Keywords
Molecular Beam Epitaxy; Quantum Wells; InAs Buffer Layer; Silicon Substrate
Issue Date
2014-04
Publisher
Journal of nanoscience and nanotechnology
Citation
VOL 14, NO 4, 2984-2989
Abstract
Nanometer scale thin InAs layer has been incorporated between Si (100) substrate and GaAs/Al0.3Ga0.7As multiple quantum well (MQW) nanostructure in order to reduce the defects generation during the growth of GaAs buffer layer on Si substrate. Observations based on atomic force microscopy (AFM) and transmission electron microscopy (TEM) suggest that initiation and propagation of defect at the Si/GaAs interface could be suppressed by incorporating thin (1 nm in thickness) InAs layer. Consequently, the microstructure and resulting optical properties improved as compared to the MQW structure formed directly on Si substrate without the InAs layer. It was also observed that there exists some limit to the desirable thickness of the InAs layer since the MQW structure having thicker InAs layer (4 nm-thick) showed deteriorated properties.
URI
http://pubs.kist.re.kr/handle/201004/46844
ISSN
15334880
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KIST Publication > Article
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