Effect of Growth Temperature and Quantum Structure on InAs/GaAs Quantum Dot Solar Cell

Title
Effect of Growth Temperature and Quantum Structure on InAs/GaAs Quantum Dot Solar Cell
Authors
박문호김호성박성준송진동김상혁이유종최원준박정호
Keywords
Solar Cell; Quantum Dots; InGaAs-Capped; High Temperature Growth
Issue Date
2014-04
Publisher
Journal of nanoscience and nanotechnology
Citation
VOL 14, NO 4, 2955-2959
Abstract
InGaAs-capped InAs quantum dots (QDs) and InAs QDs were adopted for the study of the effects through growth temperature and the band structure of InAs QDs on the performance of GaAs-based QD solar cell. It has been shown that the defects due to low temperature growth resulted in the decrease of VOC, JSC and external quantum efficiency for GaAs bulk solar cell and QD embedded solar cells. It has been also found that InAs QDs act as defects by trapping photo-generated carries which affect the carrier transport in QD solar cell. The QD solar cell with InGaAs-capped InAs QDs showed higher performance than the QD solar cell with only InAs QDs. Such result has been explained by photo-generated carrier trapping and tunneling through InGaAs QW state in InGaAs apped InAs QDs.
URI
http://pubs.kist.re.kr/handle/201004/46845
ISSN
15334880
Appears in Collections:
KIST Publication > Article
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