Back contact design using Mo and Mo:Na for low-temperature Cu(In,Ga)Se2 deposition
- Back contact design using Mo and Mo:Na for low-temperature Cu(In,Ga)Se2 deposition
- 옥은아; 서한규; 김원목; 박종극; 백영준; 정증현
- Issue Date
- Materials Research Society
- Mo:Na(B) is much more effective in Na doping than
SLG substrate, even at low temp. At high temp,
however, Na doping could be excessive with increasing
Mo:Na thickness and Mo back contact could be
mechanically unstable during or after CIGS deposition.
When Mo:Na(F) is employed, Mo back contact is
mechanically stable. Interestingly, Na diffusion into
CIGS is suppressed at high temp(need to understand
why). Rather at low temp. it was not suppressed, but
its junction with CIGS gives higher series resistance. In
addition, Mo:Na(F) is likely to act as new nucleation
centers for (220)/(204) CIGS grain orientation
particularly at low temp.
For best performance, we need to combine the merits
of Mo:Na(B) and Mo:Na(F), which requires deeper
understanding the physics related to Mo:Na layer.
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