Back contact design using Mo and Mo:Na for low-temperature Cu(In,Ga)Se2 deposition

Title
Back contact design using Mo and Mo:Na for low-temperature Cu(In,Ga)Se2 deposition
Authors
옥은아서한규김원목박종극백영준정증현
Issue Date
2013-04
Publisher
Materials Research Society
Abstract
Mo:Na(B) is much more effective in Na doping than SLG substrate, even at low temp. At high temp, however, Na doping could be excessive with increasing Mo:Na thickness and Mo back contact could be mechanically unstable during or after CIGS deposition. When Mo:Na(F) is employed, Mo back contact is mechanically stable. Interestingly, Na diffusion into CIGS is suppressed at high temp(need to understand why). Rather at low temp. it was not suppressed, but its junction with CIGS gives higher series resistance. In addition, Mo:Na(F) is likely to act as new nucleation centers for (220)/(204) CIGS grain orientation particularly at low temp. For best performance, we need to combine the merits of Mo:Na(B) and Mo:Na(F), which requires deeper understanding the physics related to Mo:Na layer.
URI
http://pubs.kist.re.kr/handle/201004/46860
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KIST Publication > Conference Paper
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