Influence of Antimony (Sb) underlying layer on low-temperature growth of CIGS films and the photovoltaic performance

Title
Influence of Antimony (Sb) underlying layer on low-temperature growth of CIGS films and the photovoltaic performance
Authors
옥은아김원목박종극백영준정증현
Issue Date
2013-10
Publisher
European photovoltaic solar energy conference and exhibition (EU-PVSEC)
Abstract
• The Sb applications to 3-stage CIGS coevaporation process was demonstrated to increase CIGS grain size and its photovoltaic performances, VOC and FF. • The improved VOC and FF was not due to the changes in the carrier density and bandgap of CIGS films, but rather to the reduction of defect population accruing from the enhanced crystallinity of CIGS films. • Sb was not observed within CIGS films, and the MoSe2 structure on Mo was better developed with Sb precursor. • The improved grain structure of CIGS films due to Sb addition was not related to the Sb-assisted diffusion of CIGS element, but more likely to the Mo surface modification. • Through comparing the effect of different Sb location during CIGS process, it was demonstrated that direct contact of Sb and Mo is necessary to improving CIGS grain structure.
URI
http://pubs.kist.re.kr/handle/201004/46861
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KIST Publication > Conference Paper
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