Influence of Antimony (Sb) underlying layer on low-temperature growth of CIGS films and the photovoltaic performance
- Influence of Antimony (Sb) underlying layer on low-temperature growth of CIGS films and the photovoltaic performance
- 옥은아; 김원목; 박종극; 백영준; 정증현
- Issue Date
- European photovoltaic solar energy conference and exhibition (EU-PVSEC)
- • The Sb applications to 3-stage CIGS coevaporation process
was demonstrated to increase CIGS grain size and its
photovoltaic performances, VOC and FF.
• The improved VOC and FF was not due to the changes in the
carrier density and bandgap of CIGS films, but rather to the
reduction of defect population accruing from the enhanced
crystallinity of CIGS films.
• Sb was not observed within CIGS films, and the MoSe2
structure on Mo was better developed with Sb precursor.
• The improved grain structure of CIGS films due to Sb
addition was not related to the Sb-assisted diffusion of CIGS
element, but more likely to the Mo surface modification.
• Through comparing the effect of different Sb location
during CIGS process, it was demonstrated that direct
contact of Sb and Mo is necessary to improving CIGS
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