Gate-Controlled Spin-Orbit Interaction in InAs High-Electron Mobility Transistor Layers Epitaxially Transferred onto Si Substrates

Title
Gate-Controlled Spin-Orbit Interaction in InAs High-Electron Mobility Transistor Layers Epitaxially Transferred onto Si Substrates
Authors
신재균김경호엄두승이호찬임성동장준연구현철오민욱고현협김형준
Issue Date
2013-12
Publisher
2013 한국자기학회 동계 학술대회
Abstract
-The first application of the epitaxial transfer for spin devices -The first success of a pseudomorphic InAs HEMT structure transfer onto Si substrates. -The epitaxial transfer supports high epitaxial quality of InAs HEMT and a strong bonding interface. -Spin-orbit interaction parameter enhances by 30% after the epitaxial transfer.
URI
http://pubs.kist.re.kr/handle/201004/46982
Appears in Collections:
KIST Publication > Conference Paper
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