Gate-Controlled Spin-Orbit Interaction in InAs High-Electron Mobility Transistor Layers Epitaxially Transferred onto Si Substrates
- Gate-Controlled Spin-Orbit Interaction in InAs High-Electron Mobility Transistor Layers Epitaxially Transferred onto Si Substrates
- 신재균; 김경호; 엄두승; 이호찬; 임성동; 장준연; 구현철; 오민욱; 고현협; 김형준
- Issue Date
- 2013 한국자기학회 동계 학술대회
- -The first application of the epitaxial transfer for spin devices
-The first success of a pseudomorphic InAs HEMT structure transfer onto Si substrates.
-The epitaxial transfer supports high epitaxial quality of InAs HEMT and a strong bonding interface.
-Spin-orbit interaction parameter enhances by 30% after the epitaxial transfer.
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- KIST Publication > Conference Paper
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