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dc.contributor.author신재균-
dc.contributor.author김경호-
dc.contributor.author엄두승-
dc.contributor.author이호찬-
dc.contributor.author임성동-
dc.contributor.author장준연-
dc.contributor.author구현철-
dc.contributor.author오민욱-
dc.contributor.author고현협-
dc.contributor.author김형준-
dc.date.accessioned2015-12-03T01:08:16Z-
dc.date.available2015-12-03T01:08:16Z-
dc.date.issued201312-
dc.identifier.other41355-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/46982-
dc.description.abstract-The first application of the epitaxial transfer for spin devices -The first success of a pseudomorphic InAs HEMT structure transfer onto Si substrates. -The epitaxial transfer supports high epitaxial quality of InAs HEMT and a strong bonding interface. -Spin-orbit interaction parameter enhances by 30% after the epitaxial transfer.-
dc.publisher2013 한국자기학회 동계 학술대회-
dc.titleGate-Controlled Spin-Orbit Interaction in InAs High-Electron Mobility Transistor Layers Epitaxially Transferred onto Si Substrates-
dc.typeConference Paper-
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