스핀주입 향상을 위한 GaAs(110) 동종에피성장에서 발생된 두께 의존성을 갖는 표창결함에 관한 연구
- 스핀주입 향상을 위한 GaAs(110) 동종에피성장에서 발생된 두께 의존성을 갖는 표창결함에 관한 연구
- 신재균; 안재평; 장준연; 김형준
- Issue Date
- 2013 한국자기학회 동계 학술대회
- One of the important things in spin-based devices is the relaxation time of the electron spins (τs), which is or should be sufficiently long to process information stored. In terms of spin relaxation time, much longer spin lifetimes (of up to 10 ns) have been reported for GaAs(110) quantum wells (QWs) compared to GaAs(001) QWs [1,2]. Therefore, high quality epitaxial GaAs(110) growth is an essential prerequisite for the long spin relaxation time. In the homoepitaxial GaAs(110) growth using a molecular beam epitaxy system, we found the advent of triangular shaped surface defects with underlying stacking faults at a certain thickness. The shapes of the surface defects evolve into dagger shapes with increasing the thickness in order presumably to release internal strain. In this study, we have observed the evolution of the triangular shaped defects and attempted to find optimum growth parameters for high quality GaAs(110) QWs
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