Quantum-dot sensitized metal oxide semiconductor hybrid phototransistor for near infrared detection

Title
Quantum-dot sensitized metal oxide semiconductor hybrid phototransistor for near infrared detection
Authors
황도경이희성이윤재김홍희노영수이준영남승희임성일최원국
Keywords
PbS; IGZO; hybrid phototransistor
Issue Date
2013-12
Publisher
2013 MRS Spring Meeting
Abstract
We introduce new approach of three.terminal PbS Quantum Dot (QD)/InGaZnO (IGZO) hybrid phototransistor for NIR detection wherein colloidal PbS QDs play a role of NIR sensitized layer and can be easily formed on the top of IGZO thin film transistors (TFTs) array. This hybrid phototransistor responded to NIR light up to 1.4 μm. The photo.generated electrons from the PbS sensitized layer can be transferred to the IGZO channel and consequently induced significant negative threshold voltage shift on the TFT. A photo gating resistive.load inverter was also implemented by connecting a unit phototransistor to an external load resistor. The photo.induced threshold voltage shifts of the hybrid phototransistor led to certain output voltage signals in static and dynamic characteristics of this photo-inverter.
URI
http://pubs.kist.re.kr/handle/201004/46989
Appears in Collections:
KIST Publication > Conference Paper
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE