Minimal single-particle Hamiltonian for charge carriers in epitaxial graphene on 4H-SiC(0001): Broken-symmetry states at Dirac points

Title
Minimal single-particle Hamiltonian for charge carriers in epitaxial graphene on 4H-SiC(0001): Broken-symmetry states at Dirac points
Authors
김승철임지순최형준손영우
Keywords
epitaxial graphene; Broken symmetry; Tight-binding model; Dirac Point; Electronic structure; Graphene nanoribbon; Angle resolved photoemission; Effective model
Issue Date
2013-12
Publisher
Solid state communications
Citation
VOL 175-176, 83-89
Abstract
We present a minimal but crucial microscopic theory for epitaxial graphene and graphene nanoribbons on the 4H-SiC(0001) surface – prototypical materials to explore physical properties of graphene in a large scale. Coarse-grained model Hamiltonians are constructed based on the atomic and electronic structures of the systems from first-principles calculations. From the theory, we unambiguously uncover origins of several intriguing experimental observations such as broken-symmetry states around the Dirac points and new energy bands arising throughout the Brillouin zone, thereby establishing the role of substrates in modifying electronic properties of graphene. We also predict that armchair graphene nanoribbons on the surface have a single energy gap of 0.2 eV when their widths are over 15 nm, in sharp contrast to their usual family behavior.
URI
http://pubs.kist.re.kr/handle/201004/47007
ISSN
00381098
Appears in Collections:
KIST Publication > Article
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