Temperature dependent band gap in PbX (X = S, Se, Te)

Title
Temperature dependent band gap in PbX (X = S, Se, Te)
Authors
Zachary M. Gibbs김형철Heng WangRobert L. WhiteFivos DrymiotisMassoud KavianyG. Jeffrey Snyder
Keywords
Chalcogenide; Semiconductor; Thermoelectrics; Band gap; Solid-state physics
Issue Date
2013-12
Publisher
Applied physics letters
Citation
VOL 103, NO 26, 262109-1-262109-5
Abstract
PbTe is an important thermoelectric material for power generation applications due its high conversion efficiency and reliability. Its extraordinary thermoelectric performance is attributed to band convergence of the light L and heavy ∑ bands. However, the temperature at which these bands converge is disputed. In this letter, we provide direct experimental evidence combined with ab initio calculations that confirm an increasing optical gap up to 673K and predict a band convergence temperature of 700 K, much higher than previous measurements showing saturation and band convergence at 450K.
URI
http://pubs.kist.re.kr/handle/201004/47046
ISSN
00036951
Appears in Collections:
KIST Publication > Article
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