Use of a precursor solution to fill the gaps between indium tin oxide nanorods, for preparation of three-dimensional CuInGaS2 thin-film solar cells

Title
Use of a precursor solution to fill the gaps between indium tin oxide nanorods, for preparation of three-dimensional CuInGaS2 thin-film solar cells
Authors
추 반 벤조진우박세진박후근도영락민병권
Keywords
Gap filling; ITO nanorods; CIGS; Solar cells; Superstrate-type
Issue Date
2014-01
Publisher
Research on chemical intermediates
Citation
VOL 40, NO 1, 49-56
Abstract
We have fabricated a three-dimensional (3D) nanostructured indium tin oxide (ITO) film in which the spaces were filled by use of a Cu, In, and Ga precursor solution. This solution has potential for use in bulk heterojunction CuInxGa1-xS2 (CIGS) thin-film solar cells. ITO nanorod films *700 nm thick on glass substrates were synthesized by radio-frequency magnetron sputtering deposition. To ensure complete filling of the gaps in ITO nanorod films, a polymeric binder-free precursor solution was used. In addition, a two-step heating process (oxidation and sulfurization) was used after coating of the precursor solution to make a CIGS absorber film with a minimum of carbon impurities. Superstrate-type solar cell devices with 3D nanostructured films (CIGS–ITO) had a photovoltaic efficiency of 1.11 % despite the absence of a buffer layer (e.g. CdS) between the CIGS and ITO.
URI
http://pubs.kist.re.kr/handle/201004/47063
ISSN
09226168
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KIST Publication > Article
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