Thermoelectric properties of P-type Sb2Te3 thick film processed by a screen-printing technique and a subsequent annealing process
- Thermoelectric properties of P-type Sb2Te3 thick film processed by a screen-printing technique and a subsequent annealing process
- 김선진; 위주형; 김진상; 김경수; 조병진
- Sb2Te3 thick film; Screen-printing technique; Low-cost; Subsequent annealing
- Issue Date
- Journal of alloys and compounds
- VOL 582, 177-180
- We herein report the thermoelectric properties of Sb2Te3 thick film fabricated by a screen-printing technique
and a subsequent annealing process. Each step of the screen-printing fabrication process of Sb2Te3
thick film is described in detail. It was found that the subsequent annealing process must be carefully
designed to achieve good thermoelectric properties of the screen-printed film. The results show that
the annealing of the screen-printed Sb2Te3 thick film together with tellurium powder in the same process
chamber significantly improves the carrier mobility by increasing the average scattering time of the carrier
in the film, resulting in a large improvement of the power factor. By optimizing the annealing process, we achieved a maximum thermoelectric figure-of-merit, ZT, of 0.32 at room temperature, which is slightly higher than that of bulk Sb2Te3. Because screen-printing is a simple and low-cost process and given that it is easy to scale up to large sizes, this result will be useful for the realization of large, filmtype thermoelectric devices.
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