Influence of background oxygen pressure on film properties of pulsed laser deposited Y:BaZrO3
- Influence of background oxygen pressure on film properties of pulsed laser deposited Y:BaZrO3
- 배기호; 장동영; 최성민; 김병국; 이종호; 손지원; 심준형
- Proton-conducting ceramics; Solid oxide fuel cells; Pulse-laser deposition; Yttrium-doped barium zirconate; Oxygen pressure; Transmission electron microscopy; Electrochemical impedance spectroscopy; Grain-boundary depletion
- Issue Date
- Thin solid films
- VOL 552, 24-31
- Yttrium-doped barium zirconate (Y:BaZrO3, BZY) thin films were prepared using pulsed laser deposition (PLD) on MgO substrates at 700 °C by varying the ambient oxygen pressure. The microstructure and electrical properties were then investigated using transmission electron microscopy and electrochemical impedance spectroscopy. Dense, well-crystallized BZY films were produced at ambient oxygen pressures (Pamb,O2) of ≤ 6.67 Pa. At Pamb,O2 ≥ 13.3 Pa, conical amorphous defects and porous microstructures were observed in the films. The conductivity of PLD BZY prepared at Pamb,O2 ≤ 13.3 Pa was measured to be close to that of reference polycrystalline BZY films, and the grain-boundary properties governed the overall ion conduction, with nano-grains being covered by the space charge depletion zones. At Pamb,O2 ≥ 13.3 Pa, microstructural defects significantly degraded the electrical properties.
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