Chemical Structures and Electrical Properties of Atomic layer deposited HfO2 Thin Films Grown at an Extremely Low Temperature (≤100 °C) Using O3 as an Oxygen Source
- Chemical Structures and Electrical Properties of Atomic layer deposited HfO2 Thin Films Grown at an Extremely Low Temperature (≤100 °C) Using O3 as an Oxygen Source
- Jeong Hwan Kim; Tae Joo Park; 김성근; Deok-Yong Cho; Hyung-Suk Jung; Sang Young Lee; Cheol Seong Hwang
- Atomic layer deposition; HfO2; Ozone concentration; Low temperature process
- Issue Date
- Applied surface science
- VOL 292, 852-856
- The properties of atomic layer deposited (ALD) HfO2 films grown at low temperatures (≤100 °C) were examined for potential applications in flexible display and bioelectronics. A saturated ALD growth behavior was observed even at an extremely low temperature (30 °C) due to the strong oxidizing potential of O3. However, HfO2 films grown at low temperatures showed a low film density and high impurity concentration, because the thermal energy during film growth was insufficient to remove ligands completely from Hf ions in precursor molecule. This resulted in low dielectric constant and high leakage current density of the films. Nevertheless, HfO2 film grown at 100 °C using O3 gas with a high concentration (390 g/Nm3) showed a tolerable impurity concentration with the dielectric constant of ~16 and breakdown field of ~4 MV/cm, which are approximately two-thirds of those of HfO2 film grown at 250 °C.
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