Chemical Structures and Electrical Properties of Atomic layer deposited HfO2 Thin Films Grown at an Extremely Low Temperature (≤100 °C) Using O3 as an Oxygen Source

Title
Chemical Structures and Electrical Properties of Atomic layer deposited HfO2 Thin Films Grown at an Extremely Low Temperature (≤100 °C) Using O3 as an Oxygen Source
Authors
Jeong Hwan KimTae Joo Park김성근Deok-Yong ChoHyung-Suk JungSang Young LeeCheol Seong Hwang
Keywords
Atomic layer deposition; HfO2; Ozone concentration; Low temperature process
Issue Date
2014-02
Publisher
Applied surface science
Citation
VOL 292, 852-856
Abstract
The properties of atomic layer deposited (ALD) HfO2 films grown at low temperatures (≤100 °C) were examined for potential applications in flexible display and bioelectronics. A saturated ALD growth behavior was observed even at an extremely low temperature (30 °C) due to the strong oxidizing potential of O3. However, HfO2 films grown at low temperatures showed a low film density and high impurity concentration, because the thermal energy during film growth was insufficient to remove ligands completely from Hf ions in precursor molecule. This resulted in low dielectric constant and high leakage current density of the films. Nevertheless, HfO2 film grown at 100 °C using O3 gas with a high concentration (390 g/Nm3) showed a tolerable impurity concentration with the dielectric constant of ~16 and breakdown field of ~4 MV/cm, which are approximately two-thirds of those of HfO2 film grown at 250 °C.
URI
http://pubs.kist.re.kr/handle/201004/47193
ISSN
01694332
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KIST Publication > Article
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