An insight into grain refinement mechanism of ultrananocrystalline diamond films obtained by direct current plasma-assisted chemical vapor deposition

Title
An insight into grain refinement mechanism of ultrananocrystalline diamond films obtained by direct current plasma-assisted chemical vapor deposition
Authors
이학주조정민김인호이승철박종극백영준이욱성
Keywords
chemical vapor deposition (CVD); DC plasmas; electron stimulated desorptions; grain refinement; ultrananocrystalline diamond films
Issue Date
2014-05
Publisher
Plasma Processes and Polymers
Citation
VOL 11, NO 5, 437-447
Abstract
The grain-refinement mechanisms involved during the deposition of diamond films by direct-current plasma assisted chemical vapor deposition (DC-PACVD) were investigated as a function of the inter-electrode electric field (IEEF). As IEEF was increased from 260 to 940 V cm−1, the local electron temperatures near the growth front increased strongly; as a result, a strong grain refinement occurred ultimately yielding ultrananocrystalline diamond films (UNCD). Such observations were attributed to novel features of the DC-PACVD, including the electron-stimulated desorption (ESD) of the hydrogen-terminated moieties located at the surface, and the consequently enhanced generation of bi-radical sites at the growing diamond surface.
URI
http://pubs.kist.re.kr/handle/201004/47337
ISSN
16128850
Appears in Collections:
KIST Publication > Article
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