An insight into grain refinement mechanism of ultrananocrystalline diamond films obtained by direct current plasma-assisted chemical vapor deposition
- An insight into grain refinement mechanism of ultrananocrystalline diamond films obtained by direct current plasma-assisted chemical vapor deposition
- 이학주; 조정민; 김인호; 이승철; 박종극; 백영준; 이욱성
- chemical vapor deposition (CVD); DC plasmas; electron
stimulated desorptions; grain refinement; ultrananocrystalline
- Issue Date
- Plasma Processes and Polymers
- VOL 11, NO 5, 437-447
- The grain-refinement mechanisms involved during the deposition of diamond films by direct-current plasma assisted chemical vapor deposition (DC-PACVD) were investigated as a function of the inter-electrode electric field (IEEF). As IEEF was increased from 260 to 940 V cm−1, the local electron temperatures near the growth front increased strongly; as a result, a strong grain refinement occurred ultimately yielding ultrananocrystalline diamond films (UNCD). Such observations were attributed to novel features of the DC-PACVD, including the electron-stimulated desorption (ESD) of the hydrogen-terminated moieties located at the surface, and the consequently enhanced generation of bi-radical sites at the growing diamond surface.
- Appears in Collections:
- KIST Publication > Article
- Files in This Item:
There are no files associated with this item.
- RIS (EndNote)
- XLS (Excel)
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.