Enhanced ferromagnetism by preventing antiferromagnetic MnO2 in InP:Be/Mn/InP:Be triple layers fabricated using molecular beam epitaxy
- Enhanced ferromagnetism by preventing antiferromagnetic MnO2 in InP:Be/Mn/InP:Be triple layers fabricated using molecular beam epitaxy
- D.J. Lee; C.S. Park; 이철진; 송진동; 구현철; Chong S. Yoon; 윤임택; H.S. Kim; 강태원; 손윤
- ferromagnetism; p-type InP:Be/Mn/InP:Be triple layers; Increased Tc; MBE
- Issue Date
- Current applied physics
- VOL 14, NO 4, 558-562
- The p-type InP:Be/Mn/InMnP:Be triple epilayers were prepared using MBE to increase Tc (>300 K) by preventing MnO2. After milling 1–3 nm of epilayers thickness from the top surface, the transmission electron microscopy (TEM) and X-ray diffraction (XRD) revealed no MnO2 and precipitates, and TEM and XRD results coincide with results of ferromagnetism. The enhanced ferromagnetic transition at >300 K corresponds to InMnP:Be. The increased ferromagnetic coupling without MnO2 is considered to originate from the increased p–d hybridation. These results demonstrate that InP-based ferromagnetic semiconductor layers having enhanced ferromagnetism can be formed by above process.
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