Enhanced ferromagnetism by preventing antiferromagnetic MnO2 in InP:Be/Mn/InP:Be triple layers fabricated using molecular beam epitaxy

Title
Enhanced ferromagnetism by preventing antiferromagnetic MnO2 in InP:Be/Mn/InP:Be triple layers fabricated using molecular beam epitaxy
Authors
D.J. LeeC.S. Park이철진송진동구현철Chong S. Yoon윤임택H.S. Kim강태원손윤
Keywords
ferromagnetism; p-type InP:Be/Mn/InP:Be triple layers; Increased Tc; MBE
Issue Date
2014-04
Publisher
Current applied physics
Citation
VOL 14, NO 4, 558-562
Abstract
The p-type InP:Be/Mn/InMnP:Be triple epilayers were prepared using MBE to increase Tc (>300 K) by preventing MnO2. After milling 1–3 nm of epilayers thickness from the top surface, the transmission electron microscopy (TEM) and X-ray diffraction (XRD) revealed no MnO2 and precipitates, and TEM and XRD results coincide with results of ferromagnetism. The enhanced ferromagnetic transition at >300 K corresponds to InMnP:Be. The increased ferromagnetic coupling without MnO2 is considered to originate from the increased p–d hybridation. These results demonstrate that InP-based ferromagnetic semiconductor layers having enhanced ferromagnetism can be formed by above process.
URI
http://pubs.kist.re.kr/handle/201004/47343
ISSN
15671739
Appears in Collections:
KIST Publication > Article
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