A comparative study of solution-processed low- and high-band-gap chalcopyrite thin-film solar cells
- A comparative study of solution-processed low- and high-band-gap chalcopyrite thin-film solar cells
- 박세진; 조윤애; 문성환; 김지은; 이도권; 곽지혜; 김지현; 김동욱; 민병권
- solution process; CIGS; high band gap; solar cells; chalcopyrite
- Issue Date
- Journal of physics D, applied physics
- VOL 47, NO 13, 135105-1-135105-7
- Low-cost and printable chalcopyrite thin-film solar cells were fabricated by a precursor
solution-based coating method with a multi-step heat-treatment process (oxidation,
sulfurization, and selenization). The high-band-gap (1.57 eV) Cu(InxGa1−x)S2 (CIGS) solar
cell showed a high open-circuit voltage of 787mV, whereas the low-band-gap (1.12 eV)
Cu(InxGa1−x)(S1−ySey)2 (CIGSSe) cell exhibited a high short-circuit current density of
32.6 mA cm−2. The energy conversion efficiencies were 8.28% for CIGS and 8.81% for
CIGSSe under standard irradiation conditions. Despite similar efficiencies, the two samples
showed notable differences in grain size, surface morphology, and interfacial properties.
Low-temperature transport and admittance characteristics of the samples clearly revealed how
their structural differences influenced their photovoltaic and electrical properties. Such
analyses provide insight into the enhanced solar cell performance of the solution-processed
chalcopyrite thin films.
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