Quantum-dot sensitized metal oxide semiconductor hybrid phototransistor for near infrared detection

Quantum-dot sensitized metal oxide semiconductor hybrid phototransistor for near infrared detection
quantum dots; IGZO thin film transistors; near infrared detection
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Solution processed colloidal quantum dots (QDs) have unique properties that can lead to cost-effective and printable optoelectronic applications such as light emitting diodes, photodetectors, and photovoltaic cells. In particular, lead sulfide (PbS) QD has been extensively studied with much attention because it is highly desirable as light absorber for harvesting sunlight energy or for near-infrared (NIR) photo-detection.[1] Here we introduce new approach of three-terminal PbS QD/InGaZnO (IGZO) hybrid phototransistor for NIR detection wherein colloidal PbS QDs play a role of NIR sensitized layer and can be easily formed on the top of IGZO thin film transistors (TFTs) array. This hybrid phototransistor responded to NIR light up to 1400 nm. The photo-generated electrons from the PbS sensitized layer can be transferred to the IGZO channel and consequently induced significant negative threshold voltage shift on the TFT. To further evaluate the real potential towards the development of more practical applications, a photo gating resistive-load inverter was implemented by connecting a unit phototransistor to an external load resistor. The photo-induced threshold voltage shifts of the hybrid phototransistor led to certain output voltage signals in static and dynamic characteristics of this photo-inverter. We expect that this hybrid phototransistor can be simply integrated on glass or plastic substrates that can be applied to pixels on flat panel photo imaging applications or building blocks on complex photo gating logic circuits.
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